Electrically driven long-range solid-state amorphization in ferroic In₂Se₃.

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Electrically induced amorphization is typically achieved via pulsed currents and melt-quench processes.
• Solid-state electrical amorphization offers potential for low-power electronic applications by avoiding high-temperature melting.

Purpose of the Study:

• To report an energy-efficient, unconventional long-range solid-state amorphization in indium selenide nanowires.
• To explore the mechanisms of electrically induced amorphization in ferroic materials without melting.

Main Methods:

• Application of a direct-current (DC) bias to ferroic β″-phase indium selenide nanowires.
• Analysis of the interplay between electric field, current flow, and piezoelectric stress.
• Observation of interlayer sliding defects and polarization rotation leading to structural collapse.

Main Results:

• Achieved energy-efficient, long-range solid-state amorphization using DC bias, distinct from pulsed methods.
• Identified multimodal coupling mechanisms involving electric field, current, and stress in layered ferroic materials.
• Demonstrated that critical disorder levels induce structural collapse and amorphization, replicated via acoustic effects.

Conclusions:

• Uncovered novel mechanisms of ferroic order coupling to external stimuli (electric field, current) and internal stress.
• The findings pave the way for designing new materials and devices for low-power electronics and photonics.
• Demonstrated a new pathway for electrical control over material structure and phase transitions at the nanoscale.