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Improving the Nonvolatile Memory Characteristics of Sol-Gel-Processed Y₂O₃ RRAM Devices Using Mono-Ethanolamine

Seongwon Heo¹, Soohyun Choi¹, Sangwoo Lee¹

¹School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

Materials (Basel, Switzerland)

|November 9, 2024

Summary

This study shows that adding mono-ethanolamine (MEA) to yttrium oxide (Y2O3) improves resistive random-access memory (RRAM) device endurance. Optimized MEA content enhances data reliability by controlling conductive filament formation.

Keywords:

RRAM Y2O3 endurance mono-ethanolamine oxygen vacancy retention sol–gel

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Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Resistive random-access memory (RRAM) devices offer promising non-volatile memory solutions.
Yttrium oxide (Y2O3) is explored as a potential dielectric material for RRAM applications.
Controlling material properties is crucial for enhancing RRAM device performance and reliability.

Purpose of the Study:

To investigate the impact of mono-ethanolamine (MEA) content on the properties of Y2O3-based RRAM devices.
To determine how MEA affects structural, optical, chemical, and electrical characteristics.
To optimize MEA concentration for improved RRAM endurance and data reliability.

Main Methods:

Sol-gel fabrication of Y2O3 films on indium tin oxide/glass substrates.
Systematic variation of MEA content during the fabrication process.
Characterization of film properties including thickness, crystallite size, oxygen vacancy concentration, and electrical performance.
Statistical analysis of endurance cycles to assess data reliability.

Main Results:

Increased MEA content led to decreased film thickness and crystallite size.
Higher MEA concentrations resulted in a slight reduction in oxygen vacancy concentration.
Reduced film thickness enhanced the electric field for conductive filament formation.
Improved endurance cycles were observed with increasing MEA content, attributed to suppressed Ag filament formation.

Conclusions:

Mono-ethanolamine (MEA) acts as an effective stabilizer in Y2O3-based RRAM devices.
Optimizing MEA content is critical for tuning film properties and device performance.
The study demonstrates a viable method for enhancing RRAM endurance through controlled material modification.