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High Chern number quantum anomalous Hall effect in monolayer Co3X3SSe (X = Sn, Pb) kagomes
Xiang Yin1, Li Deng1, Fei Wang1
1Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang, 110819, China. zhangxm@atm.neu.edu.cn.
New kagome materials, Co3Sn3SSe and Co3Pb3SSe, exhibit a high Chern number quantum anomalous Hall effect. These materials show potential for dissipationless chiral edge states and room-temperature applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Phenomena
Background:
- The quantum anomalous Hall effect (QAHE) offers dissipationless chiral edge states, crucial for exotic quantum materials.
- High Chern number QAHE is a key target for developing advanced electronic devices.
Purpose of the Study:
- To explore the structural, magnetoelectric, and topological properties of kagome monolayer Co3X3SSe (X = Sn, Pb).
- To investigate the potential of these materials for achieving a high Chern number QAHE.
Main Methods:
- First-principles calculations were employed to analyze the material properties.
- Structural stability, magnetic anisotropy, and electronic band structures were computed.
Main Results:
- Co3Sn3SSe and Co3Pb3SSe are identified as stable kagome ferromagnets with perpendicular magnetic anisotropy.
- Both materials exhibit an intrinsic high Chern number QAHE (C = -3) with sizable band gaps (46 meV and 59 meV).
- Band gaps and magnetic anisotropy are tunable with applied strain.
Conclusions:
- These kagome monolayers present a promising platform for intrinsic high Chern number QAHE.
- The strain tunability offers further possibilities for optimizing these quantum materials for device applications.
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