High-performance microbolometers with metal-insulator-metal plasmonic absorbers in CMOS technology

The practical applications of microbolometers in CMOS technology face challenges since the thermometer layers in microbolometers are typically of low IR absorption coefficients. In this paper, we demonstrate the integration of IR metal-insulator-metal (MIM) plasmonic absorber on the CMOS resistive-type microbolometers to maximize the optical detectivity. The MIM absorbers utilize Al metals and SiO₂ dielectric films in the standard CMOS process and the configuration is numerically simulated and analyzed to assess the effectiveness of high IR absorption through propagating surface plasmon (PSP) resonance and localized surface plasmon (LSP) resonance. Experimental results show that the microbolometer integrated with the MIM plasmonic absorber has a 64% improvement in detectivity (D*) compared to the one without MIM absorber in the 7-13 µm wavelength range. The detector yields a maximum D* of 2.46 × 10⁹cm Hz^1/2/W at 9.5 µm optimally under a working current of 30 μA. This performance-enhanced microbolometer provides a pathway for achieving ultra-sensitive imaging using a simple, cost-effective manufacturing process.