Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of FET01:22

Biasing of FET

218
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
218
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

295
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
295
Diode: Forward bias01:20

Diode: Forward bias

897
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
897
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

215
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
215
MOSFET Amplifiers01:17

MOSFET Amplifiers

147
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
147
Diode: Reverse bias01:14

Diode: Reverse bias

577
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
577

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

High coupling efficiency dual-wavelength band waveguide grating couplers.

Optics letters·2026
Same author

Low-loss plasmonic waveguide with high optical confinement on the thin-film lithium niobate-on-insulator (LNOI) platform.

Optics letters·2026
Same author

Integrated silicon elliptical ring modulator with ultra-high bandwidth beyond 110 GHz.

Optics letters·2025
Same author

Compact 90° optical hybrid on a silicon-on-insulator platform with a wide bandwidth of 130 nm.

Optics letters·2025
Same author

Sum-frequency generation in bound-state-in-continuum microring resonators.

Optics letters·2025
Same author

A Silicon Microring Resonator for Refractive Index Carbon Dioxide Gas Sensing.

ACS sensors·2025

Related Experiment Video

Updated: Jun 7, 2025

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.4K

Sub-volt forward-biased silicon microring modulator at 210 Gb/s.

David W U Chan, Hon Ki Tsang

    Optics Letters
    |November 15, 2024
    PubMed
    Summary

    This study presents a low-voltage silicon microring modulator (MRM) operating at 0.8 Vpp, achieving high-speed data rates up to 210 Gb/s. This advancement simplifies drivers and reduces power consumption for optical interconnects.

    Area of Science:

    • Photonics
    • Electrical Engineering
    • Materials Science

    Background:

    • High-speed optical modulators are crucial for data centers and high-performance computing (HPC).
    • Existing modulators often require high driving voltages, increasing complexity and power consumption.
    • Silicon photonics (SiPh) offers a scalable platform for integrated optical devices.

    Purpose of the Study:

    • To demonstrate a low-voltage silicon microring modulator (MRM) operating at CMOS-compatible voltages.
    • To achieve high modulation efficiency and data rates without external amplification.
    • To explore the modulator's performance at both forward and zero bias conditions.

    Main Methods:

    • Fabrication and characterization of a silicon microring modulator (MRM).

    More Related Videos

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    14.5K
    20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
    10:17

    20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

    Published on: July 12, 2017

    11.4K

    Related Experiment Videos

    Last Updated: Jun 7, 2025

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    8.4K
    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    14.5K
    20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
    10:17

    20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

    Published on: July 12, 2017

    11.4K
  • Operation with a low driving voltage of 0.8 Vpp and a forward bias of 0.2 V.
  • Testing modulation efficiency and data rates using non-return-to-zero (NRZ) and 4-level pulse amplitude modulation (PAM-4) signals.
  • Evaluation of performance at zero bias.

    • Main Results:

    • Achieved modulation at 180 Gb/s (NRZ) and 210 Gb/s (105 Gbaud PAM-4) with 0.8 Vpp driving voltage and 0.2 V forward bias.
    • Demonstrated operation up to 200 Gb/s at zero bias.
    • Observed error-free operation at 130 Gb/s (NRZ).
    • High modulation efficiency achieved by operating near injection mode.

    Conclusions:

    • The demonstrated MRM operates efficiently at low, CMOS-compatible voltages, eliminating the need for high-voltage drivers.
    • The device supports high data rates (up to 210 Gb/s) without external amplification, simplifying system integration and reducing power consumption.
    • Operation at zero bias further enhances energy efficiency and simplifies device integration for optical interconnects.