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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Laterally Actuated Si-to-Si DC MEMS Switch for Power Switching Applications.

Abdurrashid Hassan Shuaibu1, Almur A S Rabih1, Yves Blaquière1

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This study introduces a novel DC MEMS switch using electrothermal actuators with silicon-to-silicon contacts. The device achieves low resistance and fast switching, suitable for high-voltage applications.

Keywords:
DC MEMS switchPiezoMUMPsSi-to-Si contact resistanceelectrothermal actuatormicroelectromechanical systems (MEMS)

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Area of Science:

  • Microelectromechanical Systems (MEMS)
  • Solid-state physics
  • Electrical engineering

Background:

  • Electrothermal actuators offer high force and displacement for MEMS applications.
  • Existing DC MEMS switches face limitations in commercial processes, especially concerning electrical insulation.
  • Achieving reliable electrical insulation is crucial for preventing interference in DC MEMS switches.

Purpose of the Study:

  • To present a chevron-type electrothermal actuator for a DC MEMS switch.
  • To demonstrate the use of SiO2/Al thin films for electrical insulation and an Al heater for actuation.
  • To evaluate the Si-to-Si contact resistance and switching performance.

Main Methods:

  • Fabrication of a DC MEMS switch using a chevron-type electrothermal actuator with SiO2/Al thin films on a Si beam.
  • Utilizing a thin film Al heater for actuator drive and SiO2 for electrical insulation.
  • Measuring Si-to-Si contact resistance by applying current and measuring voltage, and assessing switching speed.

Main Results:

  • Achieved a low contact resistance of 150 Ω for the Si-to-Si interface.
  • Demonstrated a switching speed of less than 5 ms with an actuation voltage of 1.2 V and current of 205 mA.
  • The switch exhibits a breakdown voltage of up to 350 V, ensuring robustness.

Conclusions:

  • The developed DC MEMS switch with electrothermal actuation and Si-to-Si contacts is effective for reconfigurable conduction lines.
  • The design's electrical insulation and low contact resistance make it suitable for high-voltage and harsh environments.
  • Factors like contact force, temperature, and etching angle critically influence switch performance and longevity.