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Error compensated MOF-based ReRAM array for encrypted logical operations
Semyon V Bachinin1, Sergey S Rzhevskiy1, Ivan Sergeev1
1School of Physics and Engineering, ITMO University, Saint Petersburg, 197101, Russia. semen.bachinin@metalab.ifmo.ru.
Dalton Transactions (Cambridge, England : 2003)
|December 3, 2024
Summary
Metal-organic frameworks (MOFs) enable data operation with resistive random-access memory (ReRAM) technology. Non-ideal MOF-based ReRAM arrays achieve high-accuracy data reading and encrypted logical operations.
Area of Science:
- Materials Science
- Electronics Engineering
- Computer Science
Background:
- Metal-organic frameworks (MOFs) offer unique properties for electronic applications.
- Resistive random-access memory (ReRAM) is a promising non-volatile memory technology.
Purpose of the Study:
- To fabricate and evaluate a large-scale MOF-based ReRAM array for data storage and computation.
- To explore the potential of non-ideal ReRAM arrays for advanced data processing and security.
Main Methods:
- Fabrication of a 6x6 MOF-based ReRAM array.
- Testing electronic parameter variations within the array.
- Implementing deep learning for binary information reading.
- Utilizing the array for analogue number recording and addition operations.
- Developing an encryption key based on unique cell coefficients for logical operations.
Main Results:
- Demonstrated a 6x6 MOF-based ReRAM array with 50% electronic parameter variation.
- Achieved 95% accuracy in reading binary information using deep learning on the non-ideal array.
- Successfully performed analogue addition operations on recorded numbers (0-15).
- Established unique coefficients per cell as an encrypted key for logical operations.
Conclusions:
- Non-ideal MOF-based ReRAM arrays are viable for low-error information reading.
- This technology enables secure logical operations through encrypted keys.
- MOF-based ReRAM presents a novel platform for data processing and information security.
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