IGBT Overcurrent Capabilities in Resonant Circuits.

Area of Science:

• Power Electronics
• Electrical Engineering
• Semiconductor Devices

Background:

• Insulated gate bipolar transistors (IGBTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are crucial in modern power electronics.
• Proper control and activation of these transistors are essential to prevent damage in applications like electric vehicles and photovoltaics.

Purpose of the Study:

• To investigate the feasibility of exceeding maximum permissible transistor currents in a resonant system.
• To demonstrate a method for designing cost-effective and efficient resonant power circuits.

Main Methods:

• A double resonant transformer was constructed to generate very high currents.
• A full bridge of resonant IGBT transistors was used to switch these high currents.
• A control system with feedback from two current sensors was implemented.

Main Results:

• The system successfully demonstrated the ability to exceed the maximum permissible transistor currents.
• Currents 170% higher than the transistor's peak current were handled without issues.
• The feasibility of operating IGBTs beyond their nominal peak current in resonant systems was confirmed.

Conclusions:

• Resonant circuits can be designed to operate IGBTs at currents significantly exceeding their rated peak current.
• This approach allows for the use of lower-cost transistors, reducing overall circuit expenses.
• Switching losses can be minimized, approaching zero, leading to highly efficient power electronic systems.