Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

299
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
299
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

292
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
292
MOSFET01:16

MOSFET

420
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
420
Biasing of FET01:22

Biasing of FET

217
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
217
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

284
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
284
Characteristics of MOSFET01:17

Characteristics of MOSFET

337
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
337

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Molecular bridge engineering in covalent organic frameworks for enhanced electronic transport.

Nature communications·2026
Same author

Machine Learning-Enabled In Situ Diagnostics for Intelligent Plasma-Based Semiconductor Manufacturing: A Review.

ACS applied materials & interfaces·2026
Same author

Near-Theoretical-Limit Doping of Poly(benzodifurandione) through Carbonyl-Driven Aminoalkylsilane Attachment.

Journal of the American Chemical Society·2026
Same author

Gate dielectric stack design for 2D materials-based electronics.

Nano convergence·2026
Same author

FAST-GOAL: Fast and Efficient Global-Local Object Alignment Learning.

IEEE transactions on image processing : a publication of the IEEE Signal Processing Society·2026
Same author

Small polaron-mediated zero differential transconductance of 2D semiconductor/CoFe<sub>2</sub>O<sub>4</sub> heterojunctions for plateau transistor applications.

Nature communications·2026
Same journal

Monolithic Axial InGaAs Quantum Dot Emitters in GaAs-Based Nanowires via Sb-Mediated Facet Engineering.

Nano letters·2026
Same journal

Electrical Imaging of DNA Substructures Using Quasi-Static Nanopore Scanning.

Nano letters·2026
Same journal

Structural Basis of Hemoglobin Amyloid Fibrils Revealed by cryo-EM and Molecular Dynamics Simulations.

Nano letters·2026
Same journal

Rashba-Related Spin-Selective Effect in 2D Chiral Perovskites with Achiral Organic Cation Spacers.

Nano letters·2026
Same journal

Visualizing Superconducting Gap Modulation Induced by Pair-Breaking Scattering Interference in Bulk FeSe.

Nano letters·2026
Same journal

Generalized Geometric Phase for Coupled Meta-Atoms.

Nano letters·2026
See all related articles

Related Experiment Video

Updated: Jun 4, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.6K

P-Type Vertical FETs Realized by Using Fermi-Level Pinning-Free 2D Metallic Electrodes.

Hyokwang Park1, Hoseong Shin1, Nasir Ali1

  • 1SKKU Advanced Institute of Nano Technology and Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea.

Nano Letters
|December 23, 2024
PubMed
Summary
This summary is machine-generated.

Researchers improved p-type vertical field-effect transistors (VFETs) using high-work-function 2D metal contacts. This breakthrough enhances on/off ratios and enables dense, scaled-down electronic devices.

Keywords:
HMTohmic contactp-type FETpseudo-CFETvertical FET

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.5K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.5K

Related Experiment Videos

Last Updated: Jun 4, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.6K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.5K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.5K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Electronics

Background:

  • Vertical field-effect transistors (VFETs) in 2D nanomaterial electronics offer ultrashort channel lengths.
  • Poor performance in p-type VFETs is attributed to inadequate gate-field-penetrating electrodes and work functions.
  • Graphene electrodes (work function ~4.5 eV) are insufficient for optimal VFET characteristics.

Purpose of the Study:

  • To enhance p-type VFET performance by replacing graphene with high-work-function electrodes.
  • To achieve desired VFET characteristics through improved contact materials.
  • To explore the potential of 2D metal-incorporating pseudocomplementary FET structures for device scaling.

Main Methods:

  • Fabrication of WSe2-based p-type VFETs utilizing van-der-Waals contacts.
  • Employment of high-work-function 2D metals (2H-TaS2, NbSe2, NbS2) as electrode materials.
  • Investigation of Fermi-level pinning suppression to achieve p-type ohmic contact.

Main Results:

  • Demonstrated WSe2-based p-type VFETs with a high on/off ratio of approximately 10^5.
  • Achieved p-type ohmic contact to the WSe2 channel by using high-work-function 2D metal contacts.
  • Successfully fabricated a 2D metal-incorporating pseudocomplementary FET structure.

Conclusions:

  • High-work-function 2D metal contacts are crucial for realizing high-performance p-type VFETs.
  • The developed VFETs show significant potential for dense integration and reduced device scaling.
  • The pseudocomplementary FET structure demonstrates a pathway towards advanced 2D electronic devices.