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Updated: Jun 4, 2025

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
Artificial Control of Giant Converse Magnetoelectric Effect in Spintronic Multiferroic Heterostructure
Takamasa Usami1,2,3, Yuya Sanada2, Shumpei Fujii2
1Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka, 560-8531, Japan.
Abstract:
To develop voltage-controlled magnetization switching technologies for spintronics applications, a highly (422)-oriented Co2FeSi layer on top of the piezoelectric PMN-PT(011) is experimentally demonstrated by inserting a vanadium (V) ultra-thin layer. The strength of the growth-induced magnetic anisotropy of the (422)-oriented Co2FeSi layers can be artificially controlled by tuning the thicknesses of the inserted V and the grown Co2FeSi layers. As a result, a giant converse magnetoelectric effect (over 10-5 s m-1) and a non-volatile binary state at zero electric field are simultaneously achieved in the (422)-oriented Co2FeSi/V/PMN-PT(011) multiferroic heterostructure. This study leads to a way toward magnetoresistive random-access-memory (MRAM) with a low power writing technology.
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