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Updated: Jun 4, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Source Material Design for Realizing >50% Indium-Saving Transparent Electrode toward Sustainable Development of
Zhongyu Gao1,2, Can Han1,2, Jiejun Pan1,2
1School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, Guangdong 518107, P.R. China.
Researchers developed an indium-reduced indium zinc oxide (IZO) transparent conductive oxide using reactive plasma deposition. This IZO film offers comparable performance to indium tin oxide (ITO) and shows excellent stability for solar cells and flexible electronics.
Area of Science:
- Materials Science
- Solid State Physics
- Semiconductor Research
Background:
- Indium (In) reduction is critical for transparent conductive oxide (TCO) development, with current strategies focusing on thin films or indium-free alternatives, yet lacking industrial solutions.
- Indium zinc oxide (IZO) is explored as a potential TCO, but high ZnO content can limit carrier mobility in indium oxide (In2O3) based films.
Purpose of the Study:
- To develop an indium-reduced TCO solution by reducing indium content in the source material using reactive plasma deposition (RPD).
- To investigate the properties and stability of indium zinc oxide (IZO) films for solar cell applications.
- To evaluate the performance of IZO films in silicon heterojunction (SHJ) solar cells.
Main Methods:
- Designed an indium zinc oxide (IZO) target with a Zn3In2O6 composition for reactive plasma deposition (RPD).
- Utilized density functional theory (DFT) to understand the electronic structure implications of ZnO introduction.
- Optimized the RPD process to achieve desired film properties and conducted material characterization (XPS, optical band gap) and stability tests (damp heat).
Main Results:
- Achieved a minimal resistivity of 6.08 × 10^-4 Ω·cm, with electron mobility of 31 cm^2 V^-1 s^-1 and carrier concentration of 3.37 × 10^20 cm^-3.
- The resulting amorphous IZO film exhibited an optical band gap of ~3.6 eV and demonstrated strong stability under damp heat tests with no aging effects.
- Demonstrated wafer-scale silicon heterojunction (SHJ) solar cells using IZO films, showing higher fill factor parameters compared to reference hydrogenated cerium-doped indium oxide (ICO) cells.
Conclusions:
- The developed indium-reduced IZO film via RPD presents a viable alternative to traditional TCOs, offering comparable electrical properties and enhanced stability.
- This amorphous IZO film is suitable for temperature-sensitive applications, including silicon heterojunction (SHJ) and perovskite/silicon tandem solar cells, and flexible OLEDs.
- The study highlights the potential of RPD and tailored target composition for advancing sustainable TCO development.
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