Two-Dimensional Nonvolatile Valley Spin Valve

A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission, controlled by the relative alignment of magnetic moments of the two ferromagnetic layers. Recently, the advent of valleytronics has conceptualized a valley spin valve (VSV)─a device that utilizes the valley degree of freedom and spin-valley locking to achieve a similar valve effect without relying on magnetism. In this study, we propose a nonvolatile VSV (n-VSV) based on a two-dimensional (2D) ferroelectric semiconductor where resistance of n-VSV is controlled by a ferroelectric domain wall between two uniformly polarized domains. Focusing on the 1T″ phase of MoS₂, which is known to be ferroelectric down to a monolayer and using density functional theory combined with quantum transport calculations, we demonstrate that switching between the uniformly polarized state and the state with oppositely polarized domains separated by a domain wall results in a resistance change of as high as 10⁷. This giant VSV effect occurs due to transmission being strongly dependent on matching (mismatching) the valley-dependent spin polarization in the two domains with the same (opposite) ferroelectric polarization orientations, when the chemical potential of 1T″-MoS₂ lies within the spin-split valleys. The proposed n-VSV can be employed as a functional device for high-performance nonvolatile valleytronics.