Related Experiment Video
Updated: Jun 2, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Reduction in thermal conductivity of monolayer MoS2 by large mechanical strains for efficient thermal management
Jun Liu1, Mengqi Fang1, Eui-Hyeok Yang1
1Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ, 07030, USA.
Abstract:
Two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDC) have received extensive research interests and investigations in the past decade. In this research, we report the first experimental measurement of the in-plane thermal conductivity of MoS2 monolayer under a large mechanical strain using optothermal Raman technique. This measurement technique is direct without additional processing to the material, and MoS2's absorption coefficient is discovered during the measurement process to further increase this technique's precision. Tunable uniaxial tensile strains are applied on the MoS2 monolayer by stretching a flexible substrate it sits on. Experimental results demonstrate that, the thermal conductivity is substantially suppressed by tensile strains: under the tensile strain of 6.3%, the thermal conductivity of the MoS2 monolayer drops approximately by 62%. A serious of thermal transport properties at a group of mechanical strains are also reported, presenting a strain-dependent trend. It is the first and original study of 2D materials' thermal transport properties under a large mechanical strain (> 1%), and provides important information that the thermal transport of MoS2 will significantly decrease at a large mechanical strain. This finding provides the key information for flexible and wearable electronics thermal management and designs.
More Related Videos
08:50Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Related Concept Videos
Thermal Strain
Thermal Stress