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Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities

Artem Bercha1, Mikołaj Chlipała1, Mateusz Hajdel1

  • 1Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland.

Nanomaterials (Basel, Switzerland)
|January 24, 2025
PubMed

Keywords:
nitride LEDsphotocurrentphotoluminescencequantum-confined Stark effectscreening effectswide and narrow InGaN quantum wells

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