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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

204
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
204
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

282
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
282
Biasing of P-N Junction01:16

Biasing of P-N Junction

406
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
406
P-N junction01:11

P-N junction

459
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
459
Biasing of FET01:22

Biasing of FET

212
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
212
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

281
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Gate- and flux-tunable sin(2φ) Josephson element with planar-Ge junctions.

Axel Leblanc1, Chotivut Tangchingchai2, Zahra Sadre Momtaz3

  • 1Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG-PHELIQS, 38000, Grenoble, France. axel.leblanc@cea.fr.

Nature Communications
|January 24, 2025
PubMed
Summary
This summary is machine-generated.

Researchers created a novel Josephson circuit element using hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs). This element exhibits a dominant charge-4e supercurrent, paving the way for advanced parity-protected superconducting qubits.

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Area of Science:

  • Quantum Computing
  • Condensed Matter Physics
  • Materials Science

Background:

  • Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) are Josephson junctions with gate-tunable critical current.
  • These JoFETs can exhibit non-sinusoidal current-phase relations (CPRs) with multiple harmonics, a property not fully utilized.
  • A π-periodic CPR is crucial for building protected superconducting qubits.

Purpose of the Study:

  • To exploit the multi-harmonic CPR property of JoFETs.
  • To engineer a Josephson circuit element with an almost perfectly π-periodic CPR.
  • To demonstrate a new route towards parity-protected superconducting qubits.

Main Methods:

  • Fabrication of a superconducting quantum interference device (SQUID) with low-inductance aluminum arms and two identical JoFETs.
  • Utilizing a SiGe/Ge/SiGe quantum-well heterostructure with a high-mobility two-dimensional hole gas for JoFETs.
  • Adjusting JoFET gate voltages and magnetic flux through the SQUID to achieve a specific operational regime.

Main Results:

  • Achieved a Josephson circuit element with an almost perfectly π-periodic CPR.
  • Demonstrated a dominant charge-4e supercurrent transport, accounting for over 95% of the total supercurrent.
  • Successfully realized a key building block for protected superconducting qubits.

Conclusions:

  • The multi-harmonic CPR of JoFETs can be effectively utilized to create π-periodic Josephson elements.
  • This work presents a significant advancement in the development of parity-protected superconducting qubits.
  • The engineered Josephson element offers a promising platform for future quantum computing applications.