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    Area of Science:

    • Semiconductor Physics
    • Optoelectronics
    • Materials Science

    Background:

    • Indium Gallium Nitride (InGaN) based materials are crucial for optoelectronic devices.
    • Developing efficient red light emitters remains a challenge in InGaN technology.
    • Quantum wells (QWs) and microcavities are key structures for controlling light emission.

    Purpose of the Study:

    • To study and compare the optical properties of InGaN/GaN red quantum well (QW) and microcavity structures.
    • To investigate the potential of these structures for future red laser applications.
    • To analyze the impact of microcavity enhancement on emission characteristics.

    Main Methods:

    • Metalorganic vapor-phase epitaxy (MOVPE) growth of InGaN/GaN QW structures on sapphire substrates.
    • Optical pumping using p-side excitation for improved emission.
    • X-ray and scanning transmission electron microscopy (STEM) for structural analysis.
    • High-Q factor dielectric distributed Bragg reflector (DBR) microcavity fabrication and characterization.

    Main Results:

    • Demonstrated good crystalline quality of the InGaN/GaN structures via X-ray and STEM.
    • Observed emissions from both blue and red QWs, dominated by radiative recombination.
    • Achieved a high Q factor of 2355 for the red InGaN microcavity at 612.3 nm.
    • Identified discrete higher-order modes attributed to lateral photon confinement.
    • Observed accelerated radiative recombination and fast decay due to the Purcell effect in microcavities.
    • Noted significantly purer and more stable emission from red microcavities compared to QW samples.

    Conclusions:

    • Red InGaN microcavities exhibit superior emission purity and stability over QW structures.
    • The Purcell effect in microcavities enhances radiative recombination rates.
    • Lateral carrier confinement influences photon behavior within the microcavity.
    • These results provide a foundational basis for developing InGaN-based red vertical-cavity surface-emitting lasers (VCSELs).