Subattojoule Electrical Switching in a Two-Dimensional TaSe₂ Oxide Device with High Endurance

Area of Science:

• Materials Science
• Electrical Engineering
• Computer Science

Background:

• Artificial intelligence and the internet-of-things drive demand for low-power microelectronics.
• Two-dimensional (2D) electrical switching materials are crucial for neuromorphic computing.
• Existing 2D devices suffer from high leakage current and low endurance, limiting their application.

Purpose of the Study:

• To develop a novel vertical crossbar-structured conductive-bridge threshold switching device.
• To address the limitations of high leakage current and low endurance in 2D materials.
• To enhance performance for neuromorphic computing applications.

Main Methods:

• Fabrication of a 2D TaSe2 oxide device with a vertical crossbar structure.
• Utilizing natural air oxidation to create a TaSeO functional layer.
• Characterization using transmission electron microscopy (TEM) to understand the switching mechanism.

Main Results:

• Achieved stable electrical switching behavior with low operating voltage (<0.8 V).
• Demonstrated a steep turn-on slope (<9.4 mV decade-1).
• Exhibited exceptionally low energy consumption (0.142 aJ) and high durability (>10^8).

Conclusions:

• The developed TaSe2 oxide device overcomes endurance issues in 2D materials.
• The device shows significant promise for next-generation neuromorphic computing.
• Ag2Se nanocrystalline islands play a key role in conductive filament formation and device enhancement.