A Reliable High-Performance Floating-Gate Transistor Based on ZrS₂ Native Oxidation for Optoelectronic Synergistic...

Area of Science:

• Materials Science
• Nanoelectronics
• Device Physics

Background:

• Floating-gate transistors (FGTs) are promising for overcoming the von Neumann bottleneck in computing.
• Current FGTs face challenges due to complex dielectric fabrication and material incompatibility.
• Need for simplified, high-performance dielectrics compatible with 2D materials in FGTs.

Purpose of the Study:

• To develop a simplified and high-performance dielectric layer for 2D material-based FGTs.
• To investigate the synaptic behaviors and optoelectronic storage capabilities of the novel FGT device.

Main Methods:

• A controllable oxidation process converted 2D ZrS₂ into its native oxide, ZrO.
• Fabricated a MoS₂/ZrO/ZrS₂ heterostructure FGT.
• Characterized device performance, including on/off ratio, memory window, retention time, and storage capacity.

Main Results:

• Achieved high on/off ratio (10⁷), wide memory window (101 V), long retention (10³ s), and 7-bit storage.
• Demonstrated excellent performance metrics: PPF index (269.4%) and low power consumption (5 pJ).
• The device exhibited biological synapse behaviors and optoelectronic storage under light stimulation.

Conclusions:

• The novel ZrO/ZrS₂ dielectric approach simplifies FGT fabrication and enhances performance.
• The MoS₂/ZrO/ZrS₂ FGT shows potential for next-generation multifunctional memory devices.
• Optoelectronic control of information storage and erasure highlights applications in neuromorphic computing.