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Updated: May 29, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Exploring the electronic structure, mechanical stability and optoelectronic responses of arsenic-based M2AsX (M = Nb,
Mubashar Ali1, Zunaira Bibi2, Tehreem Fatima3
1School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, China.
Abstract:
This study utilizes first-principles computations to examine the electronic structure, mechanical stability, and optoelectronic responses of arsenic-based M2AsX (M = Nb, Mo and X = C, N) ceramics. We assessed the stability of these compounds by calculating their formation enthalpies and phonon dispersion curves, which showed that all the compounds we examined are stable and can be synthesized successfully. The robustness of these materials was also analyzed using elastic constants, which further confirmed that the M2AsX phases are stable and not prone to mechanical instability. Furthermore, the ductility or brittleness of the studied M2AsX compounds have been assessed by some other mechanical parameters such as Pughs and Poisson ratio, Cauchy pressure, and anisotropy factors. The acquired band structures and density of states demonstrate the metallic nature of all M2AsX compounds. Additionally, we have explored the several optical attributes M2AsX compounds in order to understand how these compounds interact with incoming electromagnetic radiation. The remarkable features of M2AsX compounds are expected to render them suitable for a range of applications.
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