Dynamic Interplay of Nonlocal Recombination Pathways in Quantum Emitters in Hexagonal Boron Nitride

Area of Science:

• Quantum Information Science
• Materials Science
• Solid State Physics

Background:

• Optically active defects in wide bandgap materials are key for quantum information and sensing.
• Spectral instability in quantum emitters hinders coherence and photonic integration.
• Understanding defect interactions is crucial for mitigating instability and enabling long-range quantum applications.

Purpose of the Study:

• Investigate photoluminescence spectral dynamics of quantum emitters in defective hexagonal boron nitride (hBN).
• Identify and characterize spectral wandering and diffusion in hBN emission spectra.
• Understand the mechanisms behind spectral jumps for improved quantum technologies.

Main Methods:

• Photoluminescence spectroscopy of quantum emitters in defective hBN.
• Analysis of spectral dynamics, including wandering, diffusion, and discrete energy jumps.
• Theoretical association of spectral jumps with donor-acceptor-pair (DAP)-like recombination pathways.

Main Results:

• Identified discrete energy jumps in the emission spectrum of hBN quantum emitters.
• Associated these spectral jumps with competing recombination pathways, specifically a DAP-like process.
• Linked the observed jumps to interactions between harmonic states of nitrogen π orbitals in delocalized defects.

Conclusions:

• The discrete spectral jumps in hBN are explained by a DAP-like transition sequence involving nitrogen π orbitals.
• These findings enable mapping of defect geometry within the hBN lattice.
• Provides a basis for mitigating spectral jumping and utilizing long-range defect interactions for quantum technology.