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Updated: May 28, 2025

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Current-Driven Magnetization Switching for Superconducting Diode Memory.

Yang Cheng1, Qingyuan Shu1, Haoran He1

  • 1Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA.

Advanced Materials (Deerfield Beach, Fla.)
|February 11, 2025
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Summary
This summary is machine-generated.

This study demonstrates the superconducting magnetization diode effect (SMDE) in superconductor-ferromagnet heterostructures. This effect allows for reading magnetization states by measuring superconductivity, advancing superconducting spintronics.

Keywords:
cryogenic memorymagnetization diodespin–orbit torquesuperconducting diode effectssuperconducting spintronics

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Area of Science:

  • Condensed Matter Physics
  • Materials Science

Background:

  • Stacking superconductors (SC) with ferromagnetic materials (FM) influences superconductivity, leading to spin-triplet states and topological superconductivity.
  • The superconducting diode effect, characterized by nonreciprocal transport, emerges when time and inversion symmetries are broken in SC-FM heterostructures.

Purpose of the Study:

  • To demonstrate the superconducting magnetization diode effect (SMDE) in superconductor-ferromagnet heterostructures.
  • To establish a method for reading magnetization states by measuring superconductivity.

Main Methods:

  • Fabrication of superconductor-ferromagnet heterostructures.
  • Characterization of critical currents under different magnetization states.
  • Utilizing current-driven spin-orbit torque for magnetization manipulation.

Main Results:

  • Demonstrated the existence of SMDE in SC-FM heterostructures.
  • Showcased unique mapping of magnetization states to superconductivity.
  • Achieved an ideally infinite on/off ratio for superconducting diode magnetoresistance.

Conclusions:

  • SMDE provides a novel way to read magnetization states by measuring superconductivity.
  • This work advances superconducting spintronics by overcoming limitations of traditional magnetoresistance.
  • The findings contribute to the development of novel superconducting spintronic devices.