Controllable Growth of Wafer-Scale Te_1-xSe_x Thin Films Based on Selenium Phase Change-Induced Strategy for...

Area of Science:

• Materials Science
• Thin Film Deposition
• Semiconductor Physics

Background:

• Tellurium-selenium (Te1-xSex) films show promise for infrared detection.
• Conventional deposition methods yield poorly crystallized films and face challenges in large-area synthesis.

Purpose of the Study:

• To develop a controlled synthesis method for large-area Te1-xSex films.
• To investigate the mechanism of Te1-xSex alloy formation.
• To demonstrate the performance of Te1-xSex films in infrared imaging.

Main Methods:

• Low-pressure chemical vapor deposition (LPCVD) using a selenium phase transition-induced strategy.
• Precise control of film composition by adjusting Te and Se powder ratios.
• COMSOL simulations to analyze growth uniformity.

Main Results:

• Successfully fabricated two-inch wafer-scale Te1-xSex films with controllable compositions (x from 0 to 1).
• Demonstrated that amorphous selenium phase transition facilitates Te incorporation into Se chains.
• Achieved high-performance near-infrared single-pixel imaging (128x128 pixels) using a Te0.4Se0.6 film detector.

Conclusions:

• The developed LPCVD method enables controlled synthesis of wafer-scale Te1-xSex alloy thin films.
• These films exhibit excellent properties for infrared detection and imaging.
• The findings provide crucial support for Te1-xSex applications in electronics, photonics, and optoelectronics.