Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.8K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.8K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.1K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Layer-number-parity-dependent abnormal magnetic ordering in few-layer CrI3 on N-face AlN substrate.

Nature communications·2026
Same author

Heterocyclic-N-Coordinated Ag<sub>2</sub><sup>δ-</sup> Monolayer Self-Assembled on Ag(100).

Journal of the American Chemical Society·2026
Same author

A Sc<sub>2</sub>C<sub>2</sub>@C<sub>88</sub>-cluster-based ultra-compact multilevel probabilistic bit for matrix multiplication.

Nature materials·2026
Same author

Direct Observation of Two-Dimensional Electron Gas with Low Effective Mass in Atomically Thin InTe.

Nano letters·2026
Same author

Metallic charge transport in conjugated molecular bilayers.

Nature electronics·2026
Same author

On Co<sub>3</sub>Sn<sub>2</sub>S<sub>2</sub>surfaces: crystal growth, surface recognition, atomic engineering and novel quantum structures.

Journal of physics. Condensed matter : an Institute of Physics journal·2025

Related Experiment Video

Updated: May 2, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.4K

Si-CMOS Compatible Synthesis of Wafer-Scale 1T-CrTe2 with Step-Like Magnetic Transition.

Jiwei Liu1,2,3, Cong Wang2, Yuwei Wang3

  • 1State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)
|February 18, 2025
PubMed
Summary

Researchers developed a cost-effective method for synthesizing wafer-scale 2D chromium telluride (CrTe2) films. This breakthrough enables potential advancements in spintronic devices by overcoming previous synthesis challenges.

Keywords:
2D magnetslow‐temperature synthesisplasma‐enhanced chemical vapor depositionstep‐like magnetic transitions

More Related Videos

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.1K
Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques
06:27

Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

Published on: July 2, 2018

8.0K

Related Experiment Videos

Last Updated: May 2, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.4K
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.1K
Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques
06:27

Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

Published on: July 2, 2018

8.0K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) materials offer unique properties for advanced electronics.
  • Room-temperature ferromagnetism in 2D materials is crucial for spintronics.
  • Large-scale synthesis of 2D ferromagnets like CrTe2 remains a significant hurdle.

Purpose of the Study:

  • To develop a scalable and cost-effective synthesis method for 2D 1T-CrTe2 films.
  • To investigate the magnetic properties and anisotropy of synthesized 1T-CrTe2 films.
  • To understand the influence of surface adsorption on the magnetic behavior of 1T-CrTe2.

Main Methods:

  • Plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 400 °C.
  • Synthesis on SiO2/Si substrates for wafer-scale production.
  • Magnetic hysteresis measurements and theoretical calculations.

Main Results:

  • Successfully synthesized wafer-scale 1T-CrTe2 films with controllable properties.
  • Observed perpendicular magnetic anisotropy and distinct step-like magnetic transitions.
  • Identified susceptibility to oxygen adsorption and its impact on magnetic anisotropy.
  • Theoretical calculations confirmed the role of surface oxidation and interlayer coupling.

Conclusions:

  • Demonstrated a Si-CMOS compatible fabrication approach for magnetic 2D materials.
  • Highlighted the critical influence of unintentional adsorbents (like oxygen) on magnetic behavior.
  • Paved the way for practical applications of 2D ferromagnets in spintronics.