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Updated: May 25, 2025

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Transferred Graphene Monolayer to β-Ga2O3 as a Diffusion Barrier for Based Power Device Applications.

Madani Labed1,2, Bo-In Park3,4,5, Jekyung Kim3,4

  • 1Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.

ACS Nano
|February 26, 2025
PubMed
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High-temperature annealing improves tungsten contacts on β-Ga2O3 but causes oxidation. Graphene transfer prevents this oxidation, enhancing thermal stability and device performance for high-power applications.

Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Nanotechnology

Background:

  • High-temperature annealing improves metal contacts but can degrade the metal/semiconductor interface via oxidation.
  • Tungsten (W) contacts on β-gallium oxide (β-Ga2O3) suffer from electrical instability due to oxidation after annealing.
  • A trade-off exists between improving tungsten's crystal structure and preventing surface oxidation.

Purpose of the Study:

  • To investigate the oxidation of W/β-Ga2O3 interfaces after high-temperature annealing.
  • To develop a method to mitigate oxidation and enhance the thermal stability of W/β-Ga2O3 Schottky barrier diodes (SBDs).
  • To evaluate the effectiveness of graphene as a diffusion barrier in improving device performance.

Main Methods:

Keywords:
LRGTdiffusion barriergrapheneoxidationschottky barrier diodeβ-Ga2O3

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  • Utilized a layer-resolved graphene transfer (LRGT) technique to exfoliate and transfer graphene to β-Ga2O3.
  • Fabricated W/β-Ga2O3 SBDs with and without a graphene interlayer.
  • Annealed devices at various temperatures (up to 600 °C) and characterized their electrical properties.
  • Employed SILVACO TCAD simulations to analyze heat dissipation.

Main Results:

  • Graphene insertion created a clean W/β-Ga2O3 interface, preventing oxygen intermixing.
  • Devices with graphene exhibited stable leakage current (around 10-5 A/cm2) and maintained a Schottky barrier height of ~0.80 eV and ideality factor of 2 across annealing temperatures.
  • Devices operated reliably up to 150 °C with stable parameters, unlike those without graphene.
  • TCAD simulations confirmed graphene's role in improving heat dissipation.

Conclusions:

  • Graphene acts as an effective oxygen diffusion barrier for β-Ga2O3, significantly enhancing the thermal stability of W/β-Ga2O3 SBDs.
  • The graphene interlayer minimizes the dependence of device performance on annealing temperature, crucial for high-power applications.
  • Graphene integration improves heat dissipation and enables reliable device operation at elevated temperatures.