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Updated: May 24, 2025
10:51
The Synthesis, Characterization and Reactivity of a Series of Ruthenium N-triphosPh Complexes
Published on: April 10, 2015
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Thermally Stable Ruthenium Contact for Robust p-Type Tellurium Transistors.
I K M Reaz Rahman1,2,3, Taehoon Kim1,2, Inha Kim1,2
1Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States.
Nano Letters
|February 28, 2025
Summary
Ruthenium contacts enhance the thermal stability of tellurium (Te) p-channel transistors up to 250 °C. Zirconium dioxide encapsulation further improves device performance and enables low-voltage operation.
Area of Science:
- Materials Science
- Semiconductor Device Physics
- Nanotechnology
Background:
- Tellurium (Te) offers high hole mobility for p-channel transistors.
- Thermal stability limitations hinder the practical application of Te transistors, despite their low thermal budget suitability for back-end-of-line (BEOL) integration.
Purpose of the Study:
- To investigate the thermal stability of tellurium thin films.
- To identify suitable contact metals and encapsulation strategies for stable p-type Te transistors.
Main Methods:
- Scalable thermal evaporation for tellurium thin film growth.
- Investigation of contact metal thermal stability (Ruthenium, Nickel, Palladium).
- Contact resistance measurement using the transfer-length method.
- High-κ ZrO2 encapsulation for device fabrication and characterization.
Main Results:
- Ruthenium identified as a thermally stable contact for Te transistors, withstanding up to 250 °C.
- Ruthenium shows significantly lower diffusivity in Te compared to Ni and Pd.
- Measured contact resistance at the Ru-Te interface is 1.25 kΩ·μm.
- ZrO2 encapsulation suppresses Te sublimation and acts as a gate dielectric.
Conclusions:
- Ruthenium is a promising contact material for thermally stable p-type Te transistors.
- ZrO2 encapsulation enhances device stability and enables low-voltage operation with high on/off ratios (10^5).
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