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High-Precision Small-Signal Model for Double-Channel-High-Electron-Mobility Transistors Based on the Double-Channel
Ziyue Zhao1, Qian Yu1, Yang Lu1
1The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Faculty of Integrated Circuit, Xidian University, Xi'an 710071, China.
Micromachines
|March 6, 2025
Summary
A new small-signal model for double-channel (DC)-high-electron-mobility transistors (DC-HEMTs) accurately captures unique coupling effects. This model significantly reduces errors compared to traditional methods, enhancing device characterization.
Area of Science:
- Semiconductor Device Physics
- Materials Science
- Electrical Engineering
Background:
- Conventional small-signal models are inadequate for double-channel (DC)-high-electron-mobility transistors (DC-HEMTs).
- DC-HEMTs exhibit unique vertical and lateral electron transport due to inter-channel coupling.
- This coupling effect complicates accurate device modeling.
Purpose of the Study:
- To develop a novel small-signal model for DC-HEMTs.
- To accurately characterize the inter-channel coupling effects in DC-HEMTs.
- To improve the accuracy of DC-HEMT modeling for device analysis.
Main Methods:
- Introduction of a double-channel coupling sub-model with parameters RGaN, RAlN, and CAlN.
- Inclusion of gm_upper and gm_lower parameters to represent double-channel properties.
- Calculation of initial parameter values from physical structure, material properties, DC measurements, and TCAD simulations.
- Comprehensive parameter extraction for optimized intrinsic parameter determination.
Main Results:
- The new model effectively characterizes the double-channel coupling effect.
- Initial parameter values were successfully derived using physical and simulation data.
- Optimized intrinsic parameters were extracted through a comprehensive method.
- Model validation demonstrated significantly reduced fitting errors compared to traditional models.
Conclusions:
- The developed small-signal model accurately represents the physical characteristics of DC-HEMTs.
- The model's enhanced accuracy validates its effectiveness for DC-HEMT analysis.
- This work provides a more precise tool for understanding and designing DC-HEMT devices.
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