Low-Temperature Contacts and the Coulomb Blockade Effect in Layered Nanoribbons with In-Plane Anisotropy

One-dimensional (1D) nanoribbons (NRs) constitute rapidly advancing nanotechnology with significant potential for emerging applications such as quantum sensing and metrology. TiS₃ nanoribbons exhibit strong in-plane crystal anisotropy, enabling robust 1D confinement and resilience to edge disorder. Nevertheless, charge transport in 1D TiS₃ remains relatively unexplored, particularly at low temperatures, where high contact resistance impacts device performance and fundamentally limits its applications. Here, we engineer electrical contacts between a bulk metal and a 1D NR and explore the low-temperature characteristics of the 1D field-effect devices. We report ohmic contacts for 1D TiS₃ with temperature-independent contact resistances as low as 2.7 ± 0.3 kΩ·μm, enabling the study of charge transport at low temperatures (down to 35 mK) and clear observation of the Coulomb blockade effect. We demonstrate single-electron transport in 1D TiS₃ and perform excited state spectroscopy and magnetospectroscopy, extracting an out-of-plane electron g-factor, g = 1.8 ± 0.3.