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Giant Strain-Induced Spin Splitting Effect in MnTe, a g-Wave Altermagnetic Semiconductor
1University of Nebraska-Lincoln, Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, Lincoln, Nebraska 68588, USA.
Physical Review Letters
|March 14, 2025
Summary
Elastic strain induces spin splitting in hexagonal manganese telluride (MnTe), a material with unique altermagnetic properties. This finding enables MnTe
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Hexagonal MnTe is an altermagnetic semiconductor with g-wave symmetry.
- In its nonrelativistic limit, MnTe exhibits unpolarized electric current.
- Altermagnetism offers unique spin properties for spintronic applications.
Purpose of the Study:
- To investigate the effect of elastic strain on inducing spin splitting in MnTe.
- To explore the potential of MnTe as a spin current source and detector.
- To understand the role of spin-orbit coupling in MnTe's transport properties.
Main Methods:
- Derivation of a spin-orbit-coupled k·p Hamiltonian for the valence band maximum.
- Fitting the Hamiltonian to first-principles calculated eigenvalues.
- Calculation of the spin splitting angle using the Boltzmann approach.
Main Results:
- Elastic strain effectively induces spin splitting in hexagonal MnTe.
- The spin splitting gauge factor exceeds 30 near the valence band maximum.
- Rashba-Dresselhaus spin-orbit coupling is critical for accurate transport property descriptions.
Conclusions:
- Strained MnTe can serve as an efficient source and detector of spin current.
- Substrate engineering can optimize MnTe for spintronic devices.
- Accurate modeling requires proper inclusion of spin-orbit coupling effects.
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