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Published on: December 16, 2011
Low-dielectric benzocyclobutenyl polysiloxane resin: spatial structure design and photosensitive patterning
Juan Peng1, Qiuxia Peng2, Li Fan1
1School of Materials and Chemistry, State Key Laboratory of Environmentally-friendly Energy Materials, Southwest University of Science and Technology Mianyang 621010 China yangjunxiao@swust.edu.cn jiajunma@yeah.net.
Abstract:
With the development of miniaturization and the high integration of semiconductor devices, higher performance requirements are put forward for polymer photoresists. In this paper, a benzocyclobutene-based polysiloxane photosensitive resin was prepared by sol-gel method, which was well patterned and cured quickly after UV light curing, with a minimum line width and line spacing of 10 μm. The benign combination of benzocyclobutene group (BCB) and polysiloxane in the resin makes the resin exhibit good low dielectric properties (k = 2.79) and excellent thermal properties and mechanical properties, which is different from traditional thermosetting resins.
