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Novel perovskite-based betavoltaic cell: dual additive strategy for enhanced FAPbI3 α-phase stability and performance

Chol Hyun Kim1, Muhammad Bilal Naseem1, Junho Lee1

  • 1Department of Energy Science & Engineering, Daegu Gyeongbuk Institute of Science & Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-Gun, Daegu 42988, Republic of Korea. insuil@dgist.ac.kr.

Chemical Communications (Cambridge, England)
|March 19, 2025
PubMed

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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