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Updated: May 6, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Disentangling edge and bulk spin-to-charge interconversion in MoS2 monolayer flakes
Rodrigo Torrão Victor1, Syed Hamza Safeer1,2, John F R Marroquin3
1Centro Brasileiro de Pesquisas Físicas, R. Dr. Xavier Sigaud, 150, Urca, Rio de Janeiro, 22290-180, RJ, Brazil.
Abstract:
Semiconductor transition metal dichalcogenides are an archetype for spintronic devices due to their spin-to-charge interconversion mechanisms. However, the exact microscopic origin of this interconversion is not yet determined. In our study, we investigated light-induced spin pumping in YIG/MoS2 heterostructures. Our findings revealed that the MoS2 monolayer microsized flakes contribute to spin current injection through two distinct mechanisms: metallic edge states and semiconductor area states. The competition between these mechanisms, influenced by the flake size, leads to different behaviors of spin-pumping. Our calculations of the local density of states, by means of density functional theory, of a flake show that light-driven spin current injection can be controlled based on the intensity of light with a suitable wavelength. We demonstrate that a lightdriven spin current injection can enhance up to very high values, attenuate, or even switch on/off the spin-to-charge interconversion. These results hold promise for developing low energy-consuming opto-spintronic device applications.
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