Related Experiment Video
Updated: May 16, 2025

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Detecting Lifshitz Transitions Using Nonlinear Conductivity in Bilayer Graphene
Tanweer Ahmed1, Harsh Varshney2, Bao Q Tu1
1CIC nanoGUNE BRTA, Basque Country, Donostia-San Sebastian, 20018, Spain.
Nonlinear electrical response (NLER) reveals Lifshitz transitions in bilayer graphene, even at 10K. This property, sensitive to electronic band structures, offers new insights into quantum materials.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Materials
Background:
- Second-order nonlinear electrical response (NLER) is a key property of materials lacking inversion symmetry.
- NLER offers insights into electronic band structures of atomically thin quantum materials.
- The effect of Lifshitz transitions on NLER in such systems was previously unexplored.
Purpose of the Study:
- To investigate the impact of Lifshitz transitions on the NLER in bilayer graphene (BLG).
- To establish NLER as a tool for probing electronic band structure changes in quantum materials.
Main Methods:
- Experimental investigation of NLER in bilayer graphene.
- Analysis of NLER sign changes near Lifshitz transitions at temperatures T ≥ 10 K.
- Characterization of NLER modulation by doping and interlayer potential.
Main Results:
- NLER exhibits a sign change near Lifshitz transitions in BLG, observable even at elevated temperatures (≥ 10 K).
- NLER at the band edge is influenced by extrinsic scattering and intrinsic Berry curvature dipole.
- Second-order conductivity in BLG reached over 30 µm V⁻¹ Ω⁻¹ at 3 K, a new record.
Conclusions:
- NLER is a sensitive probe for detecting Lifshitz transitions in quantum materials.
- External tuning of doping and interlayer potential allows control over NLER.
- This study highlights NLER's potential for characterizing complex electronic properties of 2D materials.
Related Concept Videos
Bewley Lattice Diagram
Gauss's Law in Dielectrics
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
Linear Approximation in Frequency Domain
In contrast, nonlinear systems do not inherently possess these properties. However, for small deviations around an operating point, a nonlinear system can often be approximated as linear....
Boundary Conditions for Current Density

