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Updated: May 15, 2025
Characterization of Ultra-fine Grained and Nanocrystalline Materials Using Transmission Kikuchi Diffraction
Published on: April 1, 2017
A novel method for through-silicon via characterization based on diffraction fringe analysis
Pengfei Lin1, Kuan Lu1, ChaBum Lee1
1J. Mike Walker '66 Department of Mechanical Engineering, Texas A&M University, 3123 TAMU, College Station, TX 77843-3123, United States.
Abstract:
The precision metrology of through-hole silicon via (TSV) in the semiconductor industry has remained a critical challenge as its critical dimension (CD) reduces. In this letter, we report a novel method for TSV geometric feature measurement and characterization. By illuminating a collimated infrared laser beam to the TSV and then analyzing the TSV edge-induced diffraction interferometric fringe patterns, multiple geometric information of the TSV could be characterized, establishing its database. This computational approach to TSV characterization was validated by experiments. Being non-destructive and easy to deploy, this method provides a low cost and high efficiency solution for TSV metrology.
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