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Related Experiment Video

Updated: May 15, 2025

$Characterization of Ultra-fine Grained and Nanocrystalline Materials Using Transmission Kikuchi Diffraction$

Characterization of Ultra-fine Grained and Nanocrystalline Materials Using Transmission Kikuchi Diffraction

Published on: April 1, 2017

A novel method for through-silicon via characterization based on diffraction fringe analysis.

Pengfei Lin¹, Kuan Lu¹, ChaBum Lee¹

¹J. Mike Walker '66 Department of Mechanical Engineering, Texas A&M University, 3123 TAMU, College Station, TX 77843-3123, United States.

Ultramicroscopy

|April 8, 2025

Summary

This summary is machine-generated.

A new method uses infrared laser diffraction patterns to measure critical dimensions of through-silicon vias (TSVs). This non-destructive technique offers a low-cost, high-efficiency solution for semiconductor metrology challenges.

Keywords:

Diffraction pattern Finite difference frequency domain (FDFD)Inspection Metrology Through-silicon via (TSV)

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Last Updated: May 15, 2025

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Published on: April 1, 2017

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

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A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

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Published on: June 2, 2017

Area of Science:

Semiconductor Manufacturing
Metrology and Measurement Science
Optical Physics

Background:

Precision metrology of through-silicon vias (TSVs) is crucial in the semiconductor industry.
Shrinking critical dimensions (CD) of TSVs present significant measurement challenges.
Existing metrology methods may be costly, destructive, or lack efficiency for advanced nodes.

Purpose of the Study:

To introduce a novel, non-destructive method for characterizing geometric features of TSVs.
To establish a computational approach for TSV metrology using optical principles.
To provide a cost-effective and efficient solution for TSV dimensional analysis.

Main Methods:

Illumination of TSVs with a collimated infrared laser beam.
Analysis of diffraction interferometric fringe patterns generated at TSV edges.
Computational characterization of multiple geometric features from fringe data.

Main Results:

Successfully characterized multiple geometric parameters of TSVs.
Validated the computational approach through experimental measurements.
Demonstrated the non-destructive nature of the proposed metrology technique.

Conclusions:

The novel laser diffraction method provides accurate TSV geometric characterization.
This approach offers a low-cost, high-efficiency, and non-destructive solution for TSV metrology.
The technique is suitable for addressing the metrology challenges posed by shrinking TSV dimensions.