Ultralow-Power Highly-Selective Near-Infrared (≈850 nm) Carbon Nanotube Flexible Optoelectronic Synaptic Transistors...

Optoelectronic synaptic devices are promising candidate components for brain-like efficient neuromorphic computing systems. The development of highly-selective near-infrared (NIR) optoelectronic synaptic devices is important for realizing more efficient optical computing, night monitoring, and robot visual perception. In this work, ultralow-power (56 aJ per light pulse), NIR (≈850 nm) highly-selective optoelectronic synaptic transistor devices based on carbon nanotube thin film transistors are developed by modification of the organic photosensitive material in the device channels. The optoelectronic synaptic devices showed high sensitivity and selectivity to 850 nm pulse light. It is noted that optoelectronic response currents of the optoelectronic synaptic transistor devices after stimulation by a single 850 nm pulse light can be nearly six times higher than those stimulated by single pulse UV light, which is attributed that IHIC has a low bandgap, strong NIR absorption, and ideal energy band alignment with carbon nanotubes. Under pulsed light stimulation, a range of complex synaptic functions are exhibited, including excitatory postsynaptic currents, paired-pulse facilitation, and the transition from short-term plasticity to long-term plasticity, spike-timing-dependent plasticity, and image perception and memory functions. Significantly, the real-time trajectory tracking of the car by the drone under nighttime conditions is successfully simulated using the optoelectronic synaptic transistor array.