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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jun 25, 2026

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

Published on: July 8, 2016

Mechanically Exfoliated InP Thin Films for Solar Energy Conversion Devices.

Bikesh Gupta¹, Parul¹, Yonghwan Lee²

¹Department of Electronic Materials Engineering Research School of Physics The Australian National University Canberra ACT 2600 Australia.

|April 11, 2025

Summary

This summary is machine-generated.

Controlled spalling offers a cost-effective method for producing thin films of indium phosphide (InP) semiconductors. These films enable efficient solar cells and photoanodes, advancing solar energy conversion technology.

Keywords:

InP photoanode solar cell spalling thin film

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Published on: September 27, 2018

Area of Science:

Materials Science
Renewable Energy
Semiconductor Physics

Background:

III-V semiconductors are ideal for solar energy conversion due to their bandgap but are costly.
Thin-film approaches can mitigate the high cost of III-V semiconductors.
Developing cost-effective methods for thin-film III-V semiconductor fabrication is crucial for widespread adoption.

Purpose of the Study:

To demonstrate a novel, cost-effective mechanical exfoliation technique (controlled spalling) for producing thin films of III-V semiconductors.
To validate the optoelectronic properties of exfoliated indium phosphide (InP) films.
To fabricate and assess the performance of solar energy conversion devices using these thin films.

Main Methods:

Mechanical exfoliation (controlled spalling) was employed to obtain 15 μm thick InP films.
Cathodoluminescence and photoluminescence spectroscopy were used for material characterization.
InP thin-film heterojunction solar cells and InP photoanodes with NiFeOOH catalyst were fabricated.

Main Results:

Successful exfoliation of 15 μm thick InP films without compromising optoelectronic properties.
Fabricated InP thin-film solar cells achieved power conversion efficiencies exceeding 13%.
Developed InP photoanodes demonstrated a photocurrent density of 19.3 mA cm⁻² at 1.23 V RHE and ≈4% applied bias photon-to-current efficiency.

Conclusions:

Controlled spalling is an effective and economical technique for producing high-quality III-V semiconductor thin films.
This method facilitates the development of cost-effective and efficient solar energy conversion devices based on III-V semiconductors.
The study highlights the potential of thin-film InP for advanced solar energy applications.