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Ferroelectrically Switchable Half-Quantized Hall Effect.

M U Muzaffar1,2, Kai-Zhi Bai3, Wei Qin4

  • 1International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.

Nano Letters
|April 24, 2025
PubMed
Summary
This summary is machine-generated.

Researchers developed a multiferroic heterostructure exhibiting the half-quantized Hall effect. This structure allows ferroelectric control of topological quantum transport in antiferromagnetic materials, paving the way for advanced quantum devices.

Keywords:
anomalous Hall effectantiferromagnetismferroelectricityhalf-quantized Hall effectmagnetoelectric effectquantum transport

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Phenomena

Background:

  • Integrating ferroelectricity, antiferromagnetism, and topological quantum transport is challenging but vital for next-generation quantum devices.
  • Multiferroic heterostructures offer a promising platform for realizing novel quantum phenomena.

Purpose of the Study:

  • To propose and investigate a multiferroic heterostructure capable of hosting the half-quantized Hall (HQH) effect.
  • To demonstrate ferroelectric control over topological quantum transport in antiferromagnetic materials.

Main Methods:

  • Theoretical proposal of a multiferroic heterostructure combining an antiferromagnetic MnBi2Te4 bilayer and an Sb2Te3 film.
  • Analysis of proximity effects between the antiferromagnetic layer and the topological insulator.
  • Investigation of the impact of interlayer sliding on electric polarization and HQH conductivity.

Main Results:

  • The proposed heterostructure exhibits an HQH effect with switchable Hall conductivity of ± e²/2h.
  • The antiferromagnetic MnBi2Te4 bilayer gaps the top surface bands of Sb2Te3 while leaving bottom bands gapless.
  • Interlayer sliding in MnBi2Te4 reverses electric polarization and the HQH conductivity, demonstrating ferroelectric control.

Conclusions:

  • The developed multiferroic heterostructure provides a novel platform for realizing switchable topological quantum transport.
  • Ferroelectric control of antiferromagnetism offers a powerful route to manipulate quantum phenomena for future quantum technologies.