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Tunable Bipolar Photothermoelectric Response from Mott Activation for In-Sensor Image Preprocessing.

Bowen Li1,2,3, Ning Lin4, Zhaowu Wang5,6

  • 1Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China.

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Summary
This summary is machine-generated.

Researchers developed a novel vanadium dioxide transistor for efficient in-sensor image preprocessing. This low-power device enables advanced edge computing applications like image classification and denoising.

Keywords:
bipolar photoresponsivityin‐sensor processingphase transitionphotothermoelectric detector

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Area of Science:

  • Materials Science
  • Edge Computing
  • Optoelectronics

Background:

  • Conventional digital hardware faces limitations due to frequent analog-to-digital conversions and the von Neumann bottleneck.
  • There is a need for efficient, large-scale integrated in-sensor devices for high-density, low-power sensory processing at the edge.
  • In-sensor image preprocessing is crucial for overcoming current hardware inefficiencies.

Purpose of the Study:

  • To introduce an adjustable broadband photodetector for in-sensor image preprocessing.
  • To demonstrate a gate-tunable phase-change vanadium dioxide thin-film transistor for enhanced sensory processing.
  • To develop wafer-scale integrated systems for advanced edge AI applications.

Main Methods:

  • Fabrication of a three-terminal vanadium dioxide/gallium nitride phototransistor utilizing a gate-tunable phase transition.
  • Characterization of the device's broadband photoresponse, responsivity modulation, and photocurrent polarity control.
  • Development of a wafer-scale bipolar phototransistor array using standard micro-/nano-fabrication techniques.

Main Results:

  • The phototransistor exhibits tunable photothermoelectric responsivities and adjustable photocurrent polarities.
  • Devices show linear gate dependence for broadband photoresponse and light-intensity dependence for photoresponsivity (positive and negative).
  • Achieved ultra-low energy consumption (8 pJ per spike) and demonstrated wafer-scale array stability (>5000 cycles).

Conclusions:

  • The developed vanadium dioxide phototransistor offers a significant advancement in low-power, high-density in-sensor processing.
  • An integrated in-sensor convolutional network demonstrated successful broadband image classification, medical image denoising, and retinal vessel segmentation.
  • This technology paves the way for next-generation smart edge sensors with enhanced capabilities.