Research on the Trajectory and Relative Speed of a Single-Sided Chemical Mechanical Polishing Machine

This study establishes a bidirectional kinematic analysis framework for single-sided chemical mechanical polishing systems through innovative coordinate transformation synergies (rotational and translational). To address three critical gaps in existing research, interaction dynamics for both pad-wafer and abrasive-wafer interfaces are systematically derived via 5-inch silicon wafers. Key advancements include (1) the development of closed-form trajectory equations for resolving multibody tribological interactions, (2) vector-based relative velocity quantification with 17 × 17 grid 3D visualization, and (3) first-principle parametric mapping of velocity nonuniformity (NUV = 0-0.42) across 0-80 rpm operational regimes. Numerical simulations reveal two fundamental regimes: near-unity rotational speed ratios (ω_P/ω_C = [0.95, 1) and (1, 1.05]) generate optimal spiral trajectories that achieve 95% surface coverage, whereas integer multiples produce stable relative velocities (1.75 m/s at 60 rpm). Experimental validation demonstrated 0.3 μm/min removal rates with <1 μm nonuniformity under optimized conditions, which was attributable to velocity stabilization effects. The methodology exhibits inherent extensibility to high-speed operations (>80 rpm) and alternative polishing configurations through coordinate transformation adaptability. This work provides a systematic derivation protocol for abrasive trajectory analysis, a visualization paradigm for velocity optimization, and quantitative guidelines for precision process control-advancing beyond current empirical approaches in surface finishing technology.