All-Hydrocarbon Low-Dielectric Loss Benzocyclobutene-Encapsulated Photoresist with High Pattern Resolution

Area of Science:

• Materials Science
• Polymer Chemistry
• Organic Electronics

Background:

• Conventional photoresists face limitations due to polarization effects from polar bonds.
• Specialized fields require UV-curable resins with low dielectric constants for precise patterning.
• Developing advanced photoresists is crucial for next-generation electronic devices.

Purpose of the Study:

• To design and synthesize a high-performance, all-hydrocarbon-type photoresist with a low dielectric constant.
• To enhance mechanical properties and photolithographic patterning capabilities.
• To investigate the impact of styrene incorporation and cross-linking density on resin performance.

Main Methods:

• Anionic polymerization was used to synthesize the film-forming resin poly 1-(4-vinylphenyl)-2-(4-benzocyclobutenyl)ethylene-styrene (P-DVB-St).
• Styrene was introduced into the 1-(4-vinylphenyl)-2-(4-benzocyclobutenyl)ethene (DVB) backbone.
• Cross-linking density was adjusted to optimize photoresist properties.

Main Results:

• The synthesized P-DVB-St resin exhibited excellent thermal stability with T5% = 401 °C.
• The photoresist demonstrated a low dielectric constant of 2.62 (at 10 MHz) and low dielectric loss (1.7 × 10⁻³).
• The material achieved a graphic resolution of 5 μm, indicating superior photolithographic patterning capabilities.

Conclusions:

• The developed all-hydrocarbon photoresist offers a promising alternative to conventional materials for specialized applications.
• Incorporating styrene improved mechanical properties without compromising photolithographic performance.
• The dual UV/thermal-cured structure contributes to enhanced thermal stability and desirable electronic properties.