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Updated: Sep 20, 2025
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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
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Quantum Geometric Engineering of Dual Hall Effects in 2D Antiferromagnetic Bilayers via Interlayer Magnetic Coupling
Zhenning Sun1, Tao Wang1, Hao Jin1
1College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
Summary
Quantum geometry in 2D CoPSe3 bilayers controls dual Hall effects. Tuning magnetic coupling enables switching between altermagnetic and antiferromagnetic phases for novel nanodevices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Interplay of quantum geometry and magnetic order is key for advanced nanodevices.
- Two-dimensional (2D) materials offer unique platforms for exploring novel electronic properties.
Purpose of the Study:
- To demonstrate precise control over quantum geometric mechanisms in 2D CoPSe3 bilayers.
- To unlock dual intrinsic Hall effects by manipulating interlayer magnetic coupling.
Main Methods:
- First-principles calculations were employed to investigate the electronic structure and transport properties.
- Analysis focused on Berry curvature and quantum metric contributions to Hall effects.
Main Results:
- Altermagnetic (AM) phase exhibits a giant anisotropic anomalous Hall effect (AHE) driven by Berry curvature.
- Antiferromagnetic (AFM) phase shows an intrinsic second-order nonlinear anomalous Hall effect (NAHE) from quantum metric accumulation.
- Reversible switching between AM and AFM phases was achieved by tuning interlayer magnetic couplings.
Conclusions:
- Quantum geometry provides a versatile tool for manipulating transport properties in 2D materials.
- 2D antiferromagnets are promising for multifunctional devices leveraging tailored quantum geometric engineering.
- This work bridges linear and nonlinear magnetoelectric responses through controlled magnetic order.
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