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Related Concept Videos

Photoluminescence: Applications01:14

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Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
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Mid-Infrared Photoluminescence from Tellurium Thin Films.

Shu Wang1,2, Naoki Higashitarumizu2,3, Moniruzzaman Jamal1,4

  • 1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States.

Nano Letters
|June 2, 2025
PubMed
Summary

Researchers grew bright tellurium thin films for mid-infrared optoelectronics. These tellurium films show high luminescence efficiency, comparable to compound semiconductors, demonstrating potential for efficient devices.

Keywords:
Te−Se alloysmid-infraredphotoluminescencephysical vapor transporttellurium

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Optoelectronics

Background:

  • Tellurium (Te) is an elemental semiconductor with a 0.34 eV band gap, promising for mid-infrared (MIR) optoelectronics.
  • Quantitative luminescence efficiency and controlled growth of optically active tellurium films remain challenging.

Purpose of the Study:

  • To demonstrate low-temperature growth of bright tellurium thin films.
  • To investigate the quantitative luminescence efficiency of tellurium films.
  • To explore band-gap tunability in tellurium-based alloys.

Main Methods:

  • Low-temperature growth of tellurium thin films using physical vapor transport.
  • Morphology control by varying growth temperature (thin films, microparticles, nanowires).
  • Patterned growth using a seed layer for selective nucleation.
  • Quantitative photoluminescence measurements at room temperature.
  • Band-gap engineering via tellurium-selenium (Te-Se) alloy formation.

Main Results:

  • Achieved bright tellurium thin films with controlled morphology (continuous films, microparticles, nanowires).
  • Demonstrated patterned growth capability for selective nucleation.
  • Measured an internal quantum yield of 2.0% at 0.34 eV for as-grown tellurium films, comparable to III-V and II-VI semiconductors.
  • Showcased band-gap tunability in Te-Se alloys, shifting the band gap to 0.55 eV with 20% selenium incorporation.

Conclusions:

  • Low-temperature physical vapor transport enables the growth of bright, optically active tellurium thin films.
  • Tellurium films exhibit high luminescence efficiency suitable for MIR optoelectronic applications.
  • Tellurium-selenium alloys offer a pathway for tuning the band gap, expanding potential device applications.