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Direct Observation of Ferroelectric Domain Switching Dynamics Under Negative Capacitance Conditions via In Situ
Yiwei Wu1,2,3, Hui Yang1,2,3, Qian He1,2,3
1Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China.
ACS Nano
|June 9, 2025
Summary
Negative capacitance (NC) in ferroelectric materials is key to low-power electronics. This study reveals how domain dynamics influence NC, showing enhanced effects in heterostructures for better device engineering.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Negative capacitance (NC) in ferroelectric materials offers a path to overcome power consumption limits in microelectronic devices.
- The relationship between ferroelectric domain dynamics and NC remains unclear due to the transient nature of the NC effect.
Purpose of the Study:
- To investigate the ferroelectric domain dynamics responsible for the negative capacitance effect.
- To explore the influence of domain switching mechanisms on NC in monolayer ferroelectrics and ferroelectric/dielectric heterostructures.
Main Methods:
- In situ transmission electron microscopy (TEM) for real-time observation of domain evolution.
- Pulse measurements to correlate electrical response with domain dynamics.
Main Results:
- Monolayer ferroelectrics exhibit three-step switching, with domain nucleation and growth dominating NC.
- Ferroelectric/dielectric heterostructures show Landau switching, enhanced by interfacial charges and ultrafast domain dynamics.
- Charge injection from polarization switching also contributes to NC.
Conclusions:
- Domain dynamics, including nucleation, growth, and interfacial charge effects, are critical for understanding and engineering negative capacitance.
- Ferroelectric/dielectric heterostructures present a promising platform for enhanced NC devices through controlled domain switching.
