Erbium-Anchoring Surface Engineering Enables Dual-Shell Stabilized CsPbI₃ Quantum Dots for Efficient Pure-Red...

Area of Science:

• Materials Science
• Nanotechnology
• Optoelectronics

Background:

• Small-sized cesium lead iodide (CsPbI3) quantum dots (QDs) are key for pure-red perovskite light-emitting diodes (PeLEDs).
• However, their practical use is limited by surface instability and defects, leading to poor performance and degradation.

Purpose of the Study:

• To develop a surface doping strategy to enhance the stability and performance of CsPbI3 QDs.
• To investigate the effect of erbium (Er3+) doping on QD surface properties and optoelectronic characteristics.

Main Methods:

• Surface doping of CsPbI3 QDs with erbium (Er3+) ions.
• Formation of a robust organic-inorganic dual-shell coordination structure via Er3+ anchoring.
• Characterization of Er-doped QDs (Er-QDs) for photoluminescence, stability, and charge transport properties.
• Fabrication and testing of PeLEDs utilizing Er-QDs.

Main Results:

• Er-doping created a stable dual-shell structure, inhibiting degradation and Oswald ripening.
• Er-QDs exhibited enhanced color purity, near-unity photoluminescence quantum yield, and improved charge transport.
• PeLEDs based on Er-QDs achieved over 25% external quantum efficiency with stable pure-red emission (CIE 0.708, 0.292), meeting Rec.2020 standards.

Conclusions:

• Surface doping with Er3+ is an effective strategy for stabilizing CsPbI3 QDs.
• This approach significantly improves QD performance for high-quality red emission in PeLEDs.
• The findings pave the way for advanced perovskite quantum dot-based optoelectronic devices.