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A X-Band Integrated Passive Device Structure Based on TMV-Embedded FOWLP
Jiajie Yang1, Lixin Xu1, Xiangyu Yin2
1School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, China.
Micromachines
|June 27, 2025
Summary
This study presents an integrated passive device (IPD) for X-band FMCW radar using fan-out wafer-level packaging (FOWLP). The novel design and testing demonstrate successful miniaturization for radar applications.
Area of Science:
- Electrical Engineering
- Microwave Engineering
- Semiconductor Packaging
Background:
- Integrated Passive Devices (IPDs) are crucial for radar systems.
- Fan-out Wafer-Level Packaging (FOWLP) offers miniaturization potential.
- X-band FMCW radar requires compact and efficient passive components.
Purpose of the Study:
- To fabricate and test an IPD structure for X-band FMCW radar using FOWLP.
- To enhance IPD performance by incorporating a transition line structure.
- To propose a simplified testing method for dual-port structures.
Main Methods:
- Fabrication of an IPD structure with a transition line for impedance matching.
- Implementation of a vertical soldered SubMiniature Push-On Micro (SMPM) interface testing method.
- Performance characterization including bandwidth, isolation, and gain.
Main Results:
- The fabricated IPD structure measures 16.983 × 24.099 × 0.56 mm³.
- Operational bandwidth achieved is 7.66% at 8.5 GHz center frequency.
- Maximum isolation reached 33.9 dB, with a 1.76% bandwidth for >20 dB isolation.
Conclusions:
- The FOWLP process is feasible for miniaturizing X-band FMCW radar antennas and IPDs.
- The developed IPD structure demonstrates promising performance for radar applications.
- The proposed testing method simplifies evaluation of dual-port structures.
