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Layer Hall Effect without External Electric Field.

Yulei Han1, Yunpeng Guo1, Zeyu Li2,3

  • 1Fuzhou University, Department of Physics, Fuzhou, Fujian 350108, China.

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|June 27, 2025
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This summary is machine-generated.

Researchers demonstrate a new method to achieve the layer Hall effect in topological insulators without an external electric field. This approach uses inequivalent exchange fields, offering a distinct Hall response and a viable pathway for future applications.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Phenomena

Background:

  • The layer Hall effect in magnetic topological layered materials involves opposite electron deflection in top and bottom layers.
  • Conventional methods to induce this effect require breaking space-time PT symmetry with an external electric field.

Purpose of the Study:

  • To propose and demonstrate a novel mechanism for realizing the layer Hall effect without an external electric field.
  • To explore the distinct Hall response generated by inequivalent surface exchange fields.

Main Methods:

  • Utilizing inequivalent exchange fields on the surfaces of a topological insulator thin film.
  • Employing the topological insulator Antimony Telluride (Sb_{2}Te_{3}) as a model system.
  • Demonstrating the effect by coupling Sb_{2}Te_{3} surfaces with different magnetic insulators.

Main Results:

  • Successfully induced the layer Hall effect by introducing inequivalent exchange fields on Sb_{2}Te_{3} surfaces.
  • Observed a distinct Hall response compared to electric-field-induced effects, particularly concerning the Fermi level.
  • Showcased the tunability of both built-in electric-field-induced and inequivalent exchange-field-induced layer Hall effects via stacking order.

Conclusions:

  • The proposed method provides a viable pathway for realizing the layer Hall effect without external electric fields.
  • This approach leverages established experimental techniques for fabricating topological insulator thin films.
  • Offers new possibilities for controlling and utilizing the layer Hall effect in advanced materials.