Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

491
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
491
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

932
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
932
MOSFET01:16

MOSFET

589
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
589
Field Effect Transistor01:29

Field Effect Transistor

575
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
575
Characteristics of MOSFET01:17

Characteristics of MOSFET

506
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
506
Biasing of FET01:22

Biasing of FET

372
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
372

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Design of electronically tunable fractional-order elements based on distributed MOS transistor structures.

Scientific reports·2026
Same author

Bioinspired high-order in-sensor spatiotemporal enhancement in van der Waals optoelectronic neuromorphic electronics.

Nature communications·2025
Same author

Design, synthesis and simulation of fractional-order element using MOS transistors as distributed resistive capacitive devices.

Scientific reports·2025
Same author

Selenium Interface Layers Boost High Mobility and Switch Ratios in van der Waals Electronics.

Nano letters·2025
Same author

Plasma-Driven Selenization for Electrical Property Enhancement in Janus 2D Materials.

Small methods·2024
Same author

Ultrafast and Broad-Band Graphene Heterojunction Photodetectors with High Gain.

ACS nano·2023
Same journal

A Droplet-Microarray Platform for Multiplex Profiling of Breast Cancer Exosome Subtypes in Patients' Blood Plasma Samples.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

Material-Dependent Functionalization of CVD-Grown TMDC Monolayers Probed by Vibrational Nanospectroscopy.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

BandGap Modulated Charge Gating of Semiconductor Coatings Stabilizes Zinc Metal Anodes.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

For High Capacity: Upcycling of Spent Graphite Catalytic via Precisely Tailoring Water-Gas Reaction.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

Electronic Engineering of Donor-Acceptor Covalent Organic Frameworks via Fluorine Substitution for Efficient Solar Hydrogen Production.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

Correction to: "A Gold Nanocage/Cluster Hybrid Structure for Whole-Body Multispectral Optoacoustic Tomography Imaging, EGFR Inhibitor Delivery, and Photothermal Therapy".

Small (Weinheim an der Bergstrasse, Germany)·2026
See all related articles

Related Experiment Video

Updated: Sep 16, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

Versatile Dual-Gate 2D Transistor for Logic-in-Memory and Neuromodulation Applications.

Advaita Ghosh1, Lester Uy Vinzons1, Adam Šlechta1,2

  • 1Graduate Institute of Biomedical Engineering, National Chung Hsing University, Taichung City, 402202, Taiwan.

Small (Weinheim an Der Bergstrasse, Germany)
|July 8, 2025
PubMed
Summary
This summary is machine-generated.

This study presents a novel van der Waals heterostructure device that integrates memory, logic, and neuromodulation. This breakthrough offers a versatile platform for energy-efficient in-memory computing and advanced neuromorphic applications.

Keywords:
dual gateneuromodulationnonvolatile memoryvan der Waals heterostructure

More Related Videos

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.9K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K

Related Experiment Videos

Last Updated: Sep 16, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.9K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Device Physics

Background:

  • The von Neumann bottleneck limits conventional computing performance.
  • Existing devices often lack integrated memory, logic, and neuromodulation.
  • Van der Waals heterostructures offer potential for novel device functionalities.

Purpose of the Study:

  • To develop a single device integrating memory, logic, and neuromodulation.
  • To explore the capabilities of a dual-gate van der Waals heterostructure transistor.
  • To demonstrate a versatile platform for in-memory computing and neuromorphic applications.

Main Methods:

  • Fabrication of a dual-gate van der Waals heterostructure floating-gate field-effect transistor.
  • Utilized molybdenum disulfide channel, hexagonal boron nitride insulators, and graphene floating gate.
  • Characterized memory, logic, and neuromorphic functionalities.

Main Results:

  • Demonstrated robust memory with a large window (133 V), excellent retention (~10,000 s), and high endurance (>500 cycles).
  • Achieved reconfigurable two-input logic OR and NOT operations with tunable gain.
  • Emulated synaptic plasticity and demonstrated neuromodulation via the top gate.

Conclusions:

  • The developed van der Waals heterostructure seamlessly integrates memory, logic, and neuromodulation.
  • The device serves as a versatile and energy-efficient platform for in-memory computing.
  • This work advances the development of next-generation neuromorphic systems.