Laser-Induced Selective Modifications of 2D InSe for Emerging Volatile Memristors

Area of Science:

• Materials Science
• Nanotechnology
• Condensed Matter Physics

Background:

• Two-dimensional (2D) materials possess unique electronic and optical properties, making them promising for next-generation electronics and memristors.
• Intrinsic properties of 2D materials often limit their use in resistive switching (RS) devices, requiring precise modification strategies.

Purpose of the Study:

• To investigate laser-induced structural modifications in 2D indium selenide (InSe) nanoflakes.
• To evaluate the impact of these modifications on resistive switching performance for memristor applications.

Main Methods:

• Controlled laser irradiation of 2D InSe nanoflakes to induce structural changes (thinning, oxidation, defect formation).
• Experimental characterization of modified InSe.
• First-principles density functional theory (DFT) calculations to understand defect mechanisms and conductive filament formation.

Main Results:

• Laser power and time precisely controlled structural modifications, including thinning and defect creation.
• Laser-induced indium and selenium vacancies facilitated titanium cation migration, promoting conductive filament formation.
• Transformed non-RS InSe into a volatile RS material with high switching ratios (10^2-10^3) and low voltage variability (9.4%).

Conclusions:

• Laser processing is an effective strategy for optimizing 2D materials for advanced memristive devices.
• The study elucidates mechanisms for enhancing RS performance through controlled defect engineering in 2D materials.
• The developed volatile memristor is suitable for high-performance applications in neuromorphic computing and advanced memory systems.