Data-efficient 4D-STEM in SEM: Beyond 2D materials to metallic materials

Ujjval Bansal1, Amit Sharma2, Barbara Putz3

  • 1Institute for Applied Materials, Karlsruhe Institute of Technology, Karlsruhe 76131, Germany.

Ultramicroscopy
|July 10, 2025
PubMed
Abstract

Related Concept Videos

Metallic Solids02:37

Metallic Solids

Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
18.8K
Yield Criteria for Ductile Materials under Plane Stress01:25

Yield Criteria for Ductile Materials under Plane Stress

In designing structural elements and machine parts using ductile materials, it is crucial to ensure that these components withstand applied stresses without yielding. Yielding is initially determined through a tensile test, which evaluates the material's response to uniaxial stress. However, tensile stress is insufficient when components face biaxial or plane stress conditions This condition requires advanced criteria to predict failure.
The Maximum Shearing Stress Criterion, also known as...
218
Theory of Metallic Conduction01:17

Theory of Metallic Conduction

The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
1.4K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
519
Unsymmetric Loading of Thin-Walled Members: Problem Solving01:07

Unsymmetric Loading of Thin-Walled Members: Problem Solving

The shear center of a channel section with uniform thickness, height, and width, is determined by computing the shear force in the member and calculating the moments of inertia of the sections.
To compute the shear forces, find the shear flow at a specific distance from the endpoint using the vertical shear and the moment of inertia values. The total shear force on the flange is calculated by integrating the shear flow from one end of the flange to the other.
Next, calculate the moments of...
172