Modulating the Afterglow Time of Mn²⁺ Doped Metal Halides and Applications in Advanced Optical Information Encryption

Mn²⁺ doped metal halide that can be grown by a facile solution reaction is a promising low-cost afterglow material. However, the afterglow mechanism is still elusive. Using a facile method to modulate afterglow time is still to be explored. In this work, we reveal that the afterglow of Cs₂Na_0.2Ag_0.8InCl₆:y%Mn can be significantly modulated by Mn²⁺ concentration. We propose that replacing Ag⁺ with Mn²⁺ leads to the appearance of interstitial Ag⁺, which temporally store the photogenerated electrons (Ag++e-→Ag). After the removal of excitation, the gradual recombination between residual holes and stored electrons [h++Ag++e-→hν+Ag+] explains the afterglow. However, excessive Mn²⁺ doping at interstitial sites does not bring about more interstitial Ag⁺ but instead introduces nonradiative traps. Therefore, as the Mn²⁺ concentration increases, the afterglow time increases from 350 s to 530 s and then decreases to 230 s, reaching a maximum at y = 40. Thus, a dynamic optical information storage and encryption application is demonstrated based on the modulated afterglow time.